A Simple, Robust, and Versatile MATLAB Formulation of the Dynamic Memdiode Model for Bipolar-Type Resistive Random Access Memory Devices

A Simple, Robust, and Versatile MATLAB Formulation of the Dynamic Memdiode Model for Bipolar-Type Resistive Random Access Memory Devices

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Modeling in an emerging technology like RRAM devices is one of the pivotal concerns for its development.In the current bibliography, most of T Disc the models face difficulties in implementing or simulating unconventional scenarios, particularly when dealing with complex input signals.In addition, circuit simulators like Spice require long running times for high-resolution results because of their internal mathematical implementation.In this work, a fast, simple, robust, and versatile model for RRAM devices built in MATLAB is presented.

The proposed model is a recursive and discretized version of the dynamic memdiode model (DMM) for bipolar-type resistive switching devices originally implemented in LTspice.The DMM model basically consists of two coupled equations: one for the current (non-linear current generator) and a second one OREGA SPRAY for the memory state of the device (time-dependent differential equation).This work presents an easy-to-use tool for researchers to reproduce the experimental behavior of their devices and predict the outcome from non-trivial experiments.Three study cases are reported, aimed at capturing different phenomenologies: a frequency effect study, a cycle-to-cycle variability fit, and a stochastic resonance impact analysis.